SQS486CENW-T1_GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Supplier Device Package: PowerPAK® 1212-8W
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8W
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Відгуки про товар
Написати відгук
Технічний опис SQS486CENW-T1_GE3 Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S), Supplier Device Package: PowerPAK® 1212-8W, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 62.5W (Tc), Rds On (Max) @ Id, Vgs: 5.1mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® 1212-8W, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive.
Інші пропозиції SQS486CENW-T1_GE3 за ціною від 21.73 грн до 103.38 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SQS486CENW-T1_GE3 | Vishay Siliconix |
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S) Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8W Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 10A, 10V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® 1212-8W Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 17918 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
SQS486CENW-T1_GE3 | Vishay / Siliconix | MOSFETs N-CHANNEL 40-V (D-S) 175C MOSFET |
на замовлення 25036 шт: термін постачання 21-30 дні (днів) |
|
| SQS486CENW-T1_GE3 |
Виробник: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 10A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8W
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
Qualification: AEC-Q101
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 10A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8W
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
Qualification: AEC-Q101
на замовлення 17918 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 83.07 грн |
| 10+ | 61.25 грн |
| 100+ | 41.49 грн |
| 500+ | 30.41 грн |
| 1000+ | 27.66 грн |
| SQS486CENW-T1_GE3 |
Виробник: Vishay / Siliconix
MOSFETs N-CHANNEL 40-V (D-S) 175C MOSFET
MOSFETs N-CHANNEL 40-V (D-S) 175C MOSFET
на замовлення 25036 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 103.38 грн |
| 10+ | 59.36 грн |
| 100+ | 35.44 грн |
| 500+ | 28.69 грн |
| 1000+ | 25.74 грн |
| 3000+ | 21.87 грн |
| 6000+ | 21.73 грн |