Технічний опис SS10P4-E3/86A VISHAY
Description: DIODE SCHOTTKY 40V 10A TO277A, Packaging: Tape & Reel (TR), Package / Case: TO-277, 3-PowerDFN, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 750pF @ 4V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-277A (SMPC), Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 40 V, Voltage - Forward (Vf) (Max) @ If: 560 mV @ 10 A, Current - Reverse Leakage @ Vr: 800 µA @ 40 V.
Інші пропозиції SS10P4-E3/86A
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SS10P4-E3/86A | Виробник : Vishay General Semiconductor - Diodes Division |
 Description: DIODE SCHOTTKY 40V 10A TO277APackaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 750pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 560 mV @ 10 A Current - Reverse Leakage @ Vr: 800 µA @ 40 V |
товару немає в наявності |
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SS10P4-E3/86A | Виробник : Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 10A TO277A Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 750pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 560 mV @ 10 A Current - Reverse Leakage @ Vr: 800 µA @ 40 V |
товару немає в наявності |