
SS2FL3HM3/I Vishay General Semiconductor - Diodes Division

Description: DIODE SCHOTTKY 30V 2A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 145pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Qualification: AEC-Q101
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Технічний опис SS2FL3HM3/I Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 2A DO219AB, Packaging: Tape & Reel (TR), Package / Case: DO-219AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 145pF @ 4V, 1MHz, Current - Average Rectified (Io): 2A, Supplier Device Package: DO-219AB (SMF), Operating Temperature - Junction: -55°C ~ 150°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 30 V, Voltage - Forward (Vf) (Max) @ If: 540 mV @ 2 A, Current - Reverse Leakage @ Vr: 200 µA @ 30 V, Qualification: AEC-Q101.
Інші пропозиції SS2FL3HM3/I
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SS2FL3HM3/I | Виробник : Vishay General Semiconductor |
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товару немає в наявності |