Технічний опис SS35HE3_A/H Vishay Semiconductors
Description: DIODE SCHOTTKY 50V 3A DO214AB, Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 500 µA @ 50 V, Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A, Voltage - DC Reverse (Vr) (Max): 50 V, Grade: Automotive, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-214AB (SMC), Current - Average Rectified (Io): 3A, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214AB, SMC, Packaging: Tape & Reel (TR).
Інші пропозиції SS35HE3_A/H
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SS35HE3_A/H | Виробник : Vishay General Semiconductor - Diodes Division |
 Description: DIODE SCHOTTKY 50V 3A DO214ABQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 500 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 50 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Tape & Reel (TR) |
товару немає в наявності |