Технічний опис SSD2025TF
Description: MOSFET 2N-CH 60V 3.3A 8SOIC, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Part Status: Obsolete, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 1V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, Rds On (Max) @ Id, Vgs: 100mOhm @ 3.3A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.3A, Drain to Source Voltage (Vdss): 60V, Power - Max: 2W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual).
Інші пропозиції SSD2025TF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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SSD2025TF | Виробник : onsemi |
Description: MOSFET 2N-CH 60V 3.3A 8SOICMounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Part Status: Obsolete Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 1V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Rds On (Max) @ Id, Vgs: 100mOhm @ 3.3A, 10V Current - Continuous Drain (Id) @ 25°C: 3.3A Drain to Source Voltage (Vdss): 60V Power - Max: 2W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) |
товару немає в наявності |

