SSF2319CJ1 Good-Ark Semiconductor
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -0.45A, -2
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: SOT-523
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 312mW
Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 450mA (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Cut Tape (CT)
| Кількість | Ціна |
|---|---|
| 20+ | 15.53 грн |
| 33+ | 9.20 грн |
| 40+ | 7.57 грн |
| 100+ | 5.34 грн |
| 250+ | 4.46 грн |
| 500+ | 3.91 грн |
| 1000+ | 3.40 грн |
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Технічний опис SSF2319CJ1 Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -0.45A, -2, Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Part Status: Active, Supplier Device Package: SOT-523, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 312mW, Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 450mA (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C, Mounting Type: Surface Mount, Package / Case: SOT-523, Packaging: Tape & Reel (TR).
Інші пропозиції SSF2319CJ1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
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SSF2319CJ1 | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -0.45A, -2 Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Part Status: Active Supplier Device Package: SOT-523 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 312mW Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 450mA (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: SOT-523 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| SSF2319CJ1 |
|
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -0.45A, -2
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: SOT-523
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 312mW
Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 450mA (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
Description: MOSFET, P-CH, SINGLE, -0.45A, -2
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: SOT-523
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 312mW
Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 450mA (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.