SSFK9120 Good-Ark Semiconductor
Виробник: Good-Ark SemiconductorDescription: MOSFET N/P-CH 20V 0.8A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
Configuration: N and P-Channel Complementary
Power - Max: 275mW (Tc)
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc), 400mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V, 78pF @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V, 600mOhm @ 300mA, 4.5V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 5.93 грн |
Відгуки про товар
Написати відгук
Технічний опис SSFK9120 Good-Ark Semiconductor
Description: MOSFET N/P-CH 20V 0.8A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 20V, Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V, FET Feature: Standard, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-363, Part Status: Active, Configuration: N and P-Channel Complementary, Power - Max: 275mW (Tc), Current - Continuous Drain (Id) @ 25°C: 800mA (Tc), 400mA (Tc), Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V, 78pF @ 10V, Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V, 600mOhm @ 300mA, 4.5V.
Інші пропозиції SSFK9120 за ціною від 6.06 грн до 32.49 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SSFK9120 | Виробник : Good-Ark Semiconductor |
Description: MOSFET N/P-CH 20V 0.8A SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V FET Feature: Standard Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 Part Status: Active Configuration: N and P-Channel Complementary Power - Max: 275mW (Tc) Current - Continuous Drain (Id) @ 25°C: 800mA (Tc), 400mA (Tc) Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V, 78pF @ 10V Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V, 600mOhm @ 300mA, 4.5V |
на замовлення 5950 шт: термін постачання 21-31 дні (днів) |
|