SSFN2603 Good-Ark Semiconductor
Виробник: Good-Ark SemiconductorDescription: MOSFET, P-CH, SINGLE, -60A, -20V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 4.5V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-PPAK (3.1x3.05)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 16.74 грн |
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Технічний опис SSFN2603 Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -60A, -20V, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 4.5V, Power Dissipation (Max): 62.5W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-PPAK (3.1x3.05), Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 15 V.
Інші пропозиції SSFN2603 за ціною від 15.50 грн до 40.91 грн
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SSFN2603 | Виробник : Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -60A, -20V Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 4.5V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-PPAK (3.1x3.05) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 15 V |
на замовлення 2960 шт: термін постачання 21-31 дні (днів) |
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