на замовлення 1299 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 66.09 грн |
| 10+ | 40.10 грн |
| 100+ | 22.59 грн |
| 500+ | 17.29 грн |
| 1000+ | 15.60 грн |
| 3000+ | 11.92 грн |
| 6000+ | 11.26 грн |
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Технічний опис SSM3J140TU,LXHF Toshiba
Description: SMOS P-CH VDSS:-20V VGSS:-8/+6V, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), Rds On (Max) @ Id, Vgs: 25.8mOhm @ 4A, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: UFM, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): +6V, -8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V, Qualification: AEC-Q101.
Інші пропозиції SSM3J140TU,LXHF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SSM3J140TU,LXHF | Виробник : Toshiba Semiconductor and Storage |
 Description: SMOS P-CH VDSS:-20V VGSS:-8/+6VPackaging: Tape & Reel (TR) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) Rds On (Max) @ Id, Vgs: 25.8mOhm @ 4A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: UFM Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): +6V, -8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V Qualification: AEC-Q101 |
товару немає в наявності |
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SSM3J140TU,LXHF | Виробник : Toshiba Semiconductor and Storage |
Description: SMOS P-CH VDSS:-20V VGSS:-8/+6V Packaging: Cut Tape (CT) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) Rds On (Max) @ Id, Vgs: 25.8mOhm @ 4A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: UFM Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): +6V, -8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V Qualification: AEC-Q101 |
товару немає в наявності |