SSM3J14TTE85LF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and StorageDescription: MOSFET P-CH 30V 2.7A TSM
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 1.35A, 10V
Power Dissipation (Max): 700mW (Ta)
Supplier Device Package: TSM
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 413 pF @ 15 V
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис SSM3J14TTE85LF Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 2.7A TSM, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), Rds On (Max) @ Id, Vgs: 85mOhm @ 1.35A, 10V, Power Dissipation (Max): 700mW (Ta), Supplier Device Package: TSM, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 413 pF @ 15 V.
Інші пропозиції SSM3J14TTE85LF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
|
|
SSM3J14TTE85LF | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 2.7A TSM Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 1.35A, 10V Power Dissipation (Max): 700mW (Ta) Supplier Device Package: TSM Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 413 pF @ 15 V |
товар відсутній |