SSM3J35MFV,L3F Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 100MA VESM
Input Capacitance (Ciss) (Max) @ Vds: 12.2 pF @ 3 V
Drain to Source Voltage (Vdss): 20 V
Supplier Device Package: VESM
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 50mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 8000+ | 2.46 грн |
| 16000+ | 2.13 грн |
| 24000+ | 2.01 грн |
| 40000+ | 1.77 грн |
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Технічний опис SSM3J35MFV,L3F Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 100MA VESM, Input Capacitance (Ciss) (Max) @ Vds: 12.2 pF @ 3 V, Drain to Source Voltage (Vdss): 20 V, Supplier Device Package: VESM, Power Dissipation (Max): 150mW (Ta), Rds On (Max) @ Id, Vgs: 8Ohm @ 50mA, 4V, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-723, Packaging: Tape & Reel (TR).
Інші пропозиції SSM3J35MFV,L3F за ціною від 2.78 грн до 14.24 грн
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SSM3J35MFV,L3F | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 100MA VESM Input Capacitance (Ciss) (Max) @ Vds: 12.2 pF @ 3 V Drain to Source Voltage (Vdss): 20 V Supplier Device Package: VESM Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 8Ohm @ 50mA, 4V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Cut Tape (CT) |
на замовлення 64429 шт: термін постачання 21-31 дні (днів) |
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