SSM3K302T(TE85L,F) Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and StorageDescription: MOSFET N-CH 30V 3A TSM
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 71mOhm @ 2A, 4V
Power Dissipation (Max): 700mW (Ta)
Supplier Device Package: TSM
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
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Технічний опис SSM3K302T(TE85L,F) Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 3A TSM, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 71mOhm @ 2A, 4V, Power Dissipation (Max): 700mW (Ta), Supplier Device Package: TSM, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4 V, Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V.
Інші пропозиції SSM3K302T(TE85L,F)
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SSM3K302T(TE85L,F) | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 3A TSM Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 71mOhm @ 2A, 4V Power Dissipation (Max): 700mW (Ta) Supplier Device Package: TSM Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V |
товару немає в наявності |