SSM3K344R,LF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 3A SOT23F
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23F
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 71mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-3 Flat Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 153 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4 V
| Кількість | Ціна |
|---|---|
| 3000+ | 7.17 грн |
| 6000+ | 6.26 грн |
| 9000+ | 5.93 грн |
| 15000+ | 5.22 грн |
| 21000+ | 5.02 грн |
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Технічний опис SSM3K344R,LF Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 3A SOT23F, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Part Status: Active, Supplier Device Package: SOT-23F, Vgs(th) (Max) @ Id: 1V @ 1mA, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 71mOhm @ 3A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-3 Flat Leads, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 153 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4 V.
Інші пропозиції SSM3K344R,LF за ціною від 4.85 грн до 32.44 грн
| Фото | Назва | Виробник | Інформація |
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SSM3K344R,LF | Виробник : Toshiba |
MOSFETs LowON Res MOSFET ID=3A VDSS=20V |
на замовлення 4648 шт: термін постачання 21-30 дні (днів) |
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SSM3K344R,LF | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 3A SOT23F Packaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 71mOhm @ 3A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SOT-23F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 153 pF @ 10 V |
на замовлення 24001 шт: термін постачання 21-31 дні (днів) |
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