Продукція > TOSHIBA > SSM6J503NU,LF(T

SSM6J503NU,LF(T TOSHIBA

pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B8242862B820&compId=SSM6J503NU.pdf?ci_sign=1491bd7abd7d95b6ed29698fe8d2344814d15642

Виробник: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: uDFN6
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Gate charge: 12.8nC
On-state resistance: 89.6mΩ
Power dissipation: 1W
Gate-source voltage: ±8V

товару немає в наявності

В кошику од. на суму грн.

Відгуки про товар

Написати відгук

Технічний опис SSM6J503NU,LF(T TOSHIBA

Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6, Kind of channel: enhancement, Type of transistor: P-MOSFET, Kind of package: reel; tape, Case: uDFN6, Mounting: SMD, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -6A, Gate charge: 12.8nC, On-state resistance: 89.6mΩ, Power dissipation: 1W, Gate-source voltage: ±8V.