SSM6K781G,LF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 12V 7A 6WCSP6C
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WCSPC (1.5x1.0)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 6 V
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 11.58 грн |
| 6000+ | 10.22 грн |
| 9000+ | 9.74 грн |
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Технічний опис SSM6K781G,LF Toshiba Semiconductor and Storage
Description: MOSFET N-CH 12V 7A 6WCSP6C, Packaging: Tape & Reel (TR), Package / Case: 6-UFBGA, WLCSP, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), Rds On (Max) @ Id, Vgs: 18mOhm @ 1.5A, 4.5V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 6-WCSPC (1.5x1.0), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 6 V.
Інші пропозиції SSM6K781G,LF за ціною від 12.57 грн до 50.80 грн
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SSM6K781G,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 12V 7A 6WCSP6C Packaging: Cut Tape (CT) Package / Case: 6-UFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 1.5A, 4.5V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-WCSPC (1.5x1.0) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 6 V |
на замовлення 12569 шт: термін постачання 21-31 дні (днів) |
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SSM6K781G,LF | Toshiba |
MOSFETs WCSP6C S-MOS TRSTR Pd=0mW F=1MHz |
на замовлення 51800 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| SSM6K781G,LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 12V 7A 6WCSP6C
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WCSPC (1.5x1.0)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 6 V
Description: MOSFET N-CH 12V 7A 6WCSP6C
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WCSPC (1.5x1.0)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 6 V
на замовлення 12569 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 50.80 грн |
| 10+ | 30.32 грн |
| 100+ | 19.54 грн |
| 500+ | 13.98 грн |
| 1000+ | 12.57 грн |
| SSM6K781G,LF |
|
Виробник: Toshiba
MOSFETs WCSP6C S-MOS TRSTR Pd=0mW F=1MHz
MOSFETs WCSP6C S-MOS TRSTR Pd=0mW F=1MHz
на замовлення 51800 шт:
термін постачання 21-30 дні (днів)