SSM6K818R,LF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and StorageDescription: N-CH MOSFET 30V, +/-20V, 15A ,0.
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 100µA
Supplier Device Package: 6-TSOP-F
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 15 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 19.92 грн |
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Технічний опис SSM6K818R,LF Toshiba Semiconductor and Storage
Description: N-CH MOSFET 30V, +/-20V, 15A ,0., Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), Rds On (Max) @ Id, Vgs: 12mOhm @ 4A, 4.5V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 2.1V @ 100µA, Supplier Device Package: 6-TSOP-F, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 15 V, Qualification: AEC-Q101.
Інші пропозиції SSM6K818R,LF за ціною від 16.60 грн до 82.44 грн
| Фото | Назва | Виробник | Інформація |
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SSM6K818R,LF | Виробник : Toshiba |
MOSFETs |
на замовлення 11972 шт: термін постачання 21-30 дні (днів) |
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SSM6K818R,LF | Виробник : Toshiba Semiconductor and Storage |
Description: N-CH MOSFET 30V, +/-20V, 15A ,0. Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 4A, 4.5V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 100µA Supplier Device Package: 6-TSOP-F Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 15 V Qualification: AEC-Q101 |
на замовлення 5583 шт: термін постачання 21-31 дні (днів) |
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