SSU1N60BTU-WS onsemi

Description: MOSFET N-CH 600V 900MA IPAK, Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: IPAK, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 28W (Tc), Rds On (Max) @ Id, Vgs: 12Ohm @ 450mA, 10V, Current - Continuous Drain (Id) @ 25°C: 900mA (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube.