ST8L65N065DM9

ST8L65N065DM9 STMicroelectronics


st8l65n065dm9.pdf Виробник: STMicroelectronics
Description: N-CHANNEL 650V 48MOHM TYP 44 A
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V
Power Dissipation (Max): 223W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 400 V
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Технічний опис ST8L65N065DM9 STMicroelectronics

Description: N-CHANNEL 650V 48MOHM TYP 44 A, Packaging: Tape & Reel (TR), Package / Case: 4-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 44A (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V, Power Dissipation (Max): 223W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: PowerFlat™ (8x8) HV, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 400 V.

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ST8L65N065DM9 ST8L65N065DM9 Виробник : STMicroelectronics st8l65n065dm9.pdf Description: N-CHANNEL 650V 48MOHM TYP 44 A
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V
Power Dissipation (Max): 223W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 400 V
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ST8L65N065DM9 Виробник : STMicroelectronics st8l65n065dm9.pdf N-channel 650 V, 48 mOhm typ., 44 A MDmesh DM9 Power MOSFET in a PowerFLAT 8x8 HV package
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