Технічний опис STB10NK60Z-1 ST
Description: MOSFET N-CH 600V 10A I2PAK, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V, Power Dissipation (Max): 115W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: I2PAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V.
Інші пропозиції STB10NK60Z-1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
STB10NK60Z-1 | Виробник : STMicroelectronics |
 Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) I2PAK Tube |
товар відсутній |
|
| STB10NK60Z-1 | Виробник : STMicroelectronics |
Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) I2PAK Tube |
товар відсутній |
||
 |
STB10NK60Z-1 | Виробник : STMicroelectronics |
Description: MOSFET N-CH 600V 10A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: I2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V |
товар відсутній |
|
 |
STB10NK60Z-1 | Виробник : STMicroelectronics |
MOSFET N-Ch 600 Volt 10 Amp Zener SuperMESH |
товар відсутній |