STB120N4F6 STMicroelectronics
Виробник: STMicroelectronicsDescription: MOSFET N-CH 40V 80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 40A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V
Qualification: AEC-Q101
на замовлення 944 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 156.64 грн |
| 10+ | 125.31 грн |
| 100+ | 99.72 грн |
| 500+ | 79.18 грн |
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Технічний опис STB120N4F6 STMicroelectronics
Description: MOSFET N-CH 40V 80A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 40A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції STB120N4F6 за ціною від 62.77 грн до 168.17 грн
| Фото | Назва | Виробник | Інформація |
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STB120N4F6 | Виробник : STMicroelectronics |
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на замовлення 1804 шт: термін постачання 21-30 дні (днів) |
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STB120N4F6 | Виробник : STMicroelectronics |
Trans MOSFET N-CH 40V 80A Automotive 3-Pin(2+Tab) D2PAK T/R |
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| STB120N4F6 | Виробник : STMicroelectronics |
Trans MOSFET N-CH 40V 80A Automotive 3-Pin(2+Tab) D2PAK T/R |
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| STB120N4F6 | Виробник : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 320A; 110W; D2PAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 80A Pulsed drain current: 320A Power dissipation: 110W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1000 шт |
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STB120N4F6 | Виробник : STMicroelectronics |
Description: MOSFET N-CH 40V 80A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 40A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V Qualification: AEC-Q101 |
товар відсутній |
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| STB120N4F6 | Виробник : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 320A; 110W; D2PAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 80A Pulsed drain current: 320A Power dissipation: 110W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Kind of channel: enhanced |
товар відсутній |