STB13NK60ZT4 STMicroelectronics
| Кількість | Ціна |
|---|---|
| 1+ | 353.72 грн |
| 10+ | 231.64 грн |
| 100+ | 143.58 грн |
| 500+ | 126.15 грн |
| 1000+ | 117.09 грн |
| 2000+ | 116.40 грн |
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Технічний опис STB13NK60ZT4 STMicroelectronics
Description: MOSFET N-CH 600V 13A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 4.5V @ 100µA, Power Dissipation (Max): 150W (Tc), Rds On (Max) @ Id, Vgs: 550mOhm @ 4.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), FET Type: N-Channel, Technology: MOSFET (Metal Oxide).
Інші пропозиції STB13NK60ZT4
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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STB13NK60ZT4 | Виробник : STMicroelectronics |
 Description: MOSFET N-CH 600V 13A D2PAKInput Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4.5V @ 100µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 4.5A, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
товару немає в наявності |
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STB13NK60ZT4 | Виробник : STMicroelectronics |
Description: MOSFET N-CH 600V 13A D2PAK Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4.5V @ 100µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 4.5A, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) FET Type: N-Channel |
товару немає в наявності |
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STB13NK60ZT4 | Виробник : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8.2A; 150W; D2PAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 8.2A Power dissipation: 150W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |