STB140NF55T4 STMicroelectronics
Виробник: STMicroelectronics
Description: MOSFET N-CH 55V 80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
| Кількість | Ціна |
|---|---|
| 2+ | 225.82 грн |
| 10+ | 141.65 грн |
| 100+ | 98.60 грн |
| 500+ | 79.70 грн |
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Технічний опис STB140NF55T4 STMicroelectronics
Description: MOSFET N-CH 55V 80A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V.
Інші пропозиції STB140NF55T4 за ціною від 68.93 грн до 243.94 грн
| Фото | Назва | Виробник | Інформація |
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STB140NF55T4 | Виробник : STMicroelectronics |
MOSFETs N-Ch 55 Volt 80 Amp |
на замовлення 1948 шт: термін постачання 21-30 дні (днів) |
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STB140NF55T4 | Виробник : STMicroelectronics |
Description: MOSFET N-CH 55V 80A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V |
товару немає в наявності |
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STB140NF55T4 | Виробник : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 55V; 80A; Idm: 320A Kind of package: reel; tape Polarisation: unipolar Case: D2PAK Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Technology: STripFET™ II Gate charge: 142nC On-state resistance: 8mΩ Power dissipation: 300W Drain current: 80A Gate-source voltage: ±20V Pulsed drain current: 320A Drain-source voltage: 55V |
товару немає в наявності |