STB14NK50ZT4 STMicroelectronics
на замовлення 6239 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 165.93 грн |
Відгуки про товар
Написати відгук
Технічний опис STB14NK50ZT4 STMicroelectronics
Description: MOSFET N-CH 500V 14A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 100µA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V.
Інші пропозиції STB14NK50ZT4
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
STB14NK50ZT4 | Виробник : STMicroelectronics |
 Trans MOSFET N-CH 500V 14A 3-Pin(2+Tab) D2PAK T/R |
товару немає в наявності |
|
| STB14NK50ZT4 | Виробник : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 7.6A; Idm: 48A; 150W; D2PAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 7.6A Power dissipation: 150W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Kind of channel: enhancement Version: ESD Pulsed drain current: 48A кількість в упаковці: 1000 шт |
товару немає в наявності |
||
 |
STB14NK50ZT4 | Виробник : STMicroelectronics |
Description: MOSFET N-CH 500V 14A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V |
товару немає в наявності |
|
|
|
STB14NK50ZT4 | Виробник : STMicroelectronics |
Description: MOSFET N-CH 500V 14A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V |
товару немає в наявності |
|
| STB14NK50ZT4 | Виробник : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 7.6A; Idm: 48A; 150W; D2PAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 7.6A Power dissipation: 150W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Kind of channel: enhancement Version: ESD Pulsed drain current: 48A |
товару немає в наявності |