STB155N3LH6 STMicroelectronics
| Кількість | Ціна |
|---|---|
| 2+ | 242.32 грн |
| 10+ | 156.30 грн |
| 100+ | 105.94 грн |
| 500+ | 77.36 грн |
| 1000+ | 59.31 грн |
| 2000+ | 55.76 грн |
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Технічний опис STB155N3LH6 STMicroelectronics
Description: MOSFET N-CH 30V 80A D2PAK, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Part Status: Active, Supplier Device Package: D²PAK (TO-263), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 110W (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.
Інші пропозиції STB155N3LH6
| Фото | Назва | Виробник | Інформація |
Доступність |
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STB155N3LH6 | Виробник : STMicroelectronics |
 Description: MOSFET N-CH 30V 80A D2PAKInput Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Active Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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STB155N3LH6 | Виробник : STMicroelectronics |
Description: MOSFET N-CH 30V 80A D2PAK Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Active Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
товару немає в наявності |