STB160N75F3 STMicroelectronics
Виробник: STMicroelectronics
Description: MOSFET N-CH 75V 120A D2PAK
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6750 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 330W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 60A, 10V
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 440.50 грн |
| 10+ | 283.87 грн |
| 100+ | 204.32 грн |
| 500+ | 159.94 грн |
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Технічний опис STB160N75F3 STMicroelectronics
Description: MOSFET N-CH 75V 120A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 6750 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V, Drain to Source Voltage (Vdss): 75 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 330W (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 60A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Інші пропозиції STB160N75F3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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STB160N75F3 | STMicroelectronics |
Description: MOSFET N-CH 75V 120A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 6750 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 330W (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 60A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. |
 |
STB160N75F3 | STMicroelectronics |
MOSFETs 75V 3.5mOhm N-Channel |
товару немає в наявності |
В кошику од. на суму грн. |
| STB160N75F3 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 120A; Idm: 480A; 330W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 120A Pulsed drain current: 480A Power dissipation: 330W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. |
| STB160N75F3 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 75V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 6750 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 330W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 75V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 6750 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 330W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| STB160N75F3 |
|
Виробник: STMicroelectronics
MOSFETs 75V 3.5mOhm N-Channel
MOSFETs 75V 3.5mOhm N-Channel
товару немає в наявності
В кошику
од. на суму грн.
| STB160N75F3 |
|
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; Idm: 480A; 330W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 330W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; Idm: 480A; 330W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 330W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.