STB18NF25 STMicroelectronics
Виробник: STMicroelectronics
Description: MOSFET N-CH 250V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 8.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Qualification: AEC-Q101
| Кількість | Ціна |
|---|---|
| 1000+ | 55.83 грн |
| 2000+ | 50.51 грн |
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Технічний опис STB18NF25 STMicroelectronics
Description: MOSFET N-CH 250V 17A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 165mOhm @ 8.5A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції STB18NF25 за ціною від 47.26 грн до 172.39 грн
| Фото | Назва | Виробник | Інформація |
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STB18NF25 | Виробник : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 250V; 12A; Idm: 68A Mounting: SMD Kind of package: reel; tape Technology: STripFET™ II Polarisation: unipolar Gate charge: 29.3nC On-state resistance: 0.165Ω Drain current: 12A Gate-source voltage: ±20V Pulsed drain current: 68A Power dissipation: 110W Drain-source voltage: 250V Case: D2PAK Kind of channel: enhancement Type of transistor: N-MOSFET |
на замовлення 985 шт: термін постачання 14-30 дні (днів) |
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STB18NF25 | Виробник : STMicroelectronics |
Description: MOSFET N-CH 250V 17A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 8.5A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 2192 шт: термін постачання 21-31 дні (днів) |
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STB18NF25 | Виробник : STMicroelectronics |
MOSFETs N-Ch 250 V .14 ohm 17A STripFET II |
на замовлення 1177 шт: термін постачання 21-30 дні (днів) |
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