STB18NF30 STMicroelectronics
Виробник: STMicroelectronics
Description: MOSFET N-CH 330V 18A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 330 V
Vgs (Max): ±20V
Qualification: AEC-Q101
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
| Кількість | Ціна |
|---|---|
| 2+ | 214.06 грн |
| 10+ | 146.18 грн |
| 100+ | 101.73 грн |
| 500+ | 82.13 грн |
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Технічний опис STB18NF30 STMicroelectronics
Description: MOSFET N-CH 330V 18A D2PAK, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Drain to Source Voltage (Vdss): 330 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 150W (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 9A, 10V, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Qualification: AEC-Q101, Grade: Automotive.
Інші пропозиції STB18NF30 за ціною від 70.39 грн до 227.68 грн
| Фото | Назва | Виробник | Інформація |
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STB18NF30 | Виробник : STMicroelectronics |
MOSFETs N-Ch 330V 18A MOS STripFET II D2PAK |
на замовлення 1421 шт: термін постачання 21-30 дні (днів) |
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STB18NF30 | Виробник : STMicroelectronics |
Description: MOSFET N-CH 330V 18A D2PAK Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Drain to Source Voltage (Vdss): 330 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 9A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |