Технічний опис STB20N60M2-EP STMicroelectronics
Description: MOSFET N-CH 600V 13A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 10V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V.
Інші пропозиції STB20N60M2-EP
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STB20N60M2-EP | Виробник : STMicroelectronics |
Description: MOSFET N-CH 600V 13A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V |
товару немає в наявності |
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| STB20N60M2-EP | Виробник : STMicroelectronics |
 MOSFET N-channel 600 V, 0.24 Ohm typ., 13 A MDmesh M2 EP Power MOSFET in a D2PAK package |
товару немає в наявності |