Технічний опис STB21NM50N-1 ST
Description: MOSFET N-CH 500V 18A I2PAK, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V, Power Dissipation (Max): 140W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: I2PAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V.
Інші пропозиції STB21NM50N-1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| STB21NM50N-1 | Виробник : ST |
 TO-263/D2-PAK |
на замовлення 30000 шт: термін постачання 14-28 дні (днів) |
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STB21NM50N-1 | Виробник : STMicroelectronics |
Description: MOSFET N-CH 500V 18A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: I2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V |
товар відсутній |
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STB21NM50N-1 | Виробник : STMicroelectronics |
MOSFET N-CHANNEL MFT |
товар відсутній |