STB28NM50N STMicroelectronics
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 21A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 158mOhm @ 10.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1735 pF @ 25 V
| Кількість | Ціна |
|---|---|
| 1000+ | 224.05 грн |
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Технічний опис STB28NM50N STMicroelectronics
Description: MOSFET N-CH 500V 21A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Rds On (Max) @ Id, Vgs: 158mOhm @ 10.5A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1735 pF @ 25 V.
Інші пропозиції STB28NM50N за ціною від 227.91 грн до 543.99 грн
| Фото | Назва | Виробник | Інформація |
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STB28NM50N | Виробник : STMicroelectronics |
Description: MOSFET N-CH 500V 21A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 158mOhm @ 10.5A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1735 pF @ 25 V |
на замовлення 1087 шт: термін постачання 21-31 дні (днів) |
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STB28NM50N | Виробник : STMicroelectronics |
MOSFETs N-Ch 500V 0.135 21A MDmesh II |
на замовлення 922 шт: термін постачання 21-30 дні (днів) |
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| STB28NM50N | Виробник : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 21A; 150W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 21A Power dissipation: 150W Case: D2PAK On-state resistance: 158mΩ Mounting: SMD Gate charge: 50nC |
товару немає в наявності |