STB31N65M5 STMicroelectronics
на замовлення 950 шт:
термін постачання 119-128 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 316.19 грн |
| 10+ | 287.23 грн |
| 25+ | 204.59 грн |
| 100+ | 193.96 грн |
| 250+ | 174.04 грн |
| 500+ | 140.16 грн |
| 1000+ | 128.87 грн |
Відгуки про товар
Написати відгук
Технічний опис STB31N65M5 STMicroelectronics
Description: MOSFET N-CH 650V 22A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 148mOhm @ 11A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: D²PAK (TO-263), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1865 pF @ 100 V.
Інші пропозиції STB31N65M5
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
STB31N65M5 | Виробник : STMicroelectronics |
 Trans MOSFET N-CH 650V 22A 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
|
| STB31N65M5 | Виробник : STMicroelectronics |
Trans MOSFET N-CH 650V 22A 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
||
 |
STB31N65M5 | Виробник : STMicroelectronics |
Description: MOSFET N-CH 650V 22A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 148mOhm @ 11A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: D²PAK (TO-263) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1865 pF @ 100 V |
товар відсутній |
|
|
|
STB31N65M5 | Виробник : STMicroelectronics |
Description: MOSFET N-CH 650V 22A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 148mOhm @ 11A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: D²PAK (TO-263) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1865 pF @ 100 V |
товар відсутній |