Технічний опис STB33N60M6 STMicroelectronics
Description: MOSFET N-CH 600V 25A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 12.5A, 10V, Power Dissipation (Max): 190W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 33.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 100 V.
Інші пропозиції STB33N60M6
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| STB33N60M6 | Виробник : STMicroelectronics |
 Trans MOSFET N-CH 600V 25A 3-Pin(2+Tab) D2PAK T/R |
товару немає в наявності |
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| STB33N60M6 | Виробник : STMicroelectronics |
Description: MOSFET N-CH 600V 25A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 12.5A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 33.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 100 V |
товару немає в наявності |
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| STB33N60M6 | Виробник : STMicroelectronics |
MOSFETs N-channel 600 V, 105 mOhm typ 25 A MDmesh M6 Power MOSFET |
товару немає в наявності |