STB34NM60ND STMicroelectronics
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 29A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V
| Кількість | Ціна |
|---|---|
| 1000+ | 384.73 грн |
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Технічний опис STB34NM60ND STMicroelectronics
Description: MOSFET N-CH 600V 29A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V, Power Dissipation (Max): 190W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V.
Інші пропозиції STB34NM60ND за ціною від 235.81 грн до 795.86 грн
| Фото | Назва | Виробник | Інформація |
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STB34NM60ND | Виробник : STMicroelectronics |
MOSFETs N-Ch Power Mosfet 600V 0.097 Ohm 29A |
на замовлення 1190 шт: термін постачання 21-30 дні (днів) |
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STB34NM60ND | Виробник : STMicroelectronics |
Description: MOSFET N-CH 600V 29A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V |
на замовлення 1265 шт: термін постачання 21-31 дні (днів) |
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| STB34NM60ND | Виробник : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; N; 600V; 29A; 190W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: N Drain-source voltage: 600V Drain current: 29A Power dissipation: 190W Case: D2PAK; TO263 Gate-source voltage: 25V On-state resistance: 97mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 80.4nC |
на замовлення 1000 шт: термін постачання 14-30 дні (днів) |
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