STB3N62K3 STMicroelectronics

Description: MOSFET N-CH 620V 2.7A D2PAK, Power Dissipation (Max): 45W (Tc), Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Drain to Source Voltage (Vdss): 620 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 4.5V @ 50µA.