STB60NE06L-16T4 STM

Description: MOSFET N-CH 60V 60A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±15V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 150W (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).