STB6N52K3 STMicroelectronics


en.CD00208985.pdf
Виробник: STMicroelectronics

на замовлення 900 шт:

термін постачання 14-28 дні (днів)
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Технічний опис STB6N52K3 STMicroelectronics

Description: MOSFET N-CH 525V 5A D2PAK, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Drain to Source Voltage (Vdss): 525 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: D²PAK (TO-263), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Power Dissipation (Max): 70W (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), FET Type: N-Channel.

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STB6N52K3 STB6N52K3 Виробник : STMicroelectronics en.CD00208985.pdf Description: MOSFET N-CH 525V 5A D2PAK
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 525 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
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STB6N52K3 STB6N52K3 Виробник : STMicroelectronics en.CD00208985.pdf Description: MOSFET N-CH 525V 5A D2PAK
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 525 V
товару немає в наявності
В кошику  од. на суму  грн.