STB6NK60Z-1 STMicroelectronics

Description: MOSFET N-CH 600V 6A I2PAK, Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: I2PAK, Vgs(th) (Max) @ Id: 4.5V @ 100µA, Power Dissipation (Max): 110W (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Tube.