Технічний опис STB6NK60Z-1 ST
Description: MOSFET N-CH 600V 6A I2PAK, Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: I2PAK, Vgs(th) (Max) @ Id: 4.5V @ 100µA, Power Dissipation (Max): 110W (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Tube.
Інші пропозиції STB6NK60Z-1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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STB6NK60Z-1 | STMicroelectronics |
 Description: MOSFET N-CH 600V 6A I2PAKInput Capacitance (Ciss) (Max) @ Vds: 905 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: I2PAK Vgs(th) (Max) @ Id: 4.5V @ 100µA Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. |
 |
STB6NK60Z-1 | STMicroelectronics |
MOSFETs N-Ch, 600V-1ohm Zener SuperMESH 6A |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. |
| STB6NK60Z-1 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 6A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Description: MOSFET N-CH 600V 6A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| STB6NK60Z-1 |
|
Виробник: STMicroelectronics
MOSFETs N-Ch, 600V-1ohm Zener SuperMESH 6A
MOSFETs N-Ch, 600V-1ohm Zener SuperMESH 6A
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.