Технічний опис STB70NF03L-1 ST
Description: MOSFET N-CH 30V 70A I2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 35A, 10V, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: I2PAK (TO-262), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±18V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V.
Інші пропозиції STB70NF03L-1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| STB70NF03L-1 | Виробник : ST |
 TO-263/D2-PAK |
на замовлення 60000 шт: термін постачання 14-28 дні (днів) |
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STB70NF03L-1 | Виробник : STMicroelectronics |
Description: MOSFET N-CH 30V 70A I2PAK Packaging: Tape & Reel (TR) Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 35A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: I2PAK (TO-262) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±18V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V |
товар відсутній |