| Кількість | Ціна |
|---|---|
| 2+ | 169.95 грн |
| 10+ | 151.49 грн |
| 100+ | 105.94 грн |
| 500+ | 87.12 грн |
| 1000+ | 71.09 грн |
| 2000+ | 66.77 грн |
| 5000+ | 64.33 грн |
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Технічний опис STB8NM60D STMicroelectronics
Description: MOSFET N-CH 600V 8A D2PAK, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -65°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 100W (Tc), Rds On (Max) @ Id, Vgs: 1Ohm @ 2.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc).
Інші пропозиції STB8NM60D
| Фото | Назва | Виробник | Інформація |
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STB8NM60D | Виробник : STMicroelectronics |
 Description: MOSFET N-CH 600V 8A D2PAKFET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) |
товару немає в наявності |
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STB8NM60D | Виробник : STMicroelectronics |
Description: MOSFET N-CH 600V 8A D2PAK Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
товару немає в наявності |