STD10P10F6 STMicroelectronics
Виробник: STMicroelectronics
MOSFETs P-channel 100 V, 0.136 Ohm typ., 10 A STripFET F6 Power MOSFET in a DPAK package
| Кількість | Ціна |
|---|---|
| 4+ | 92.70 грн |
| 10+ | 56.59 грн |
| 100+ | 32.62 грн |
| 500+ | 25.58 грн |
| 1000+ | 23.14 грн |
| 2500+ | 20.35 грн |
| 5000+ | 20.14 грн |
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Технічний опис STD10P10F6 STMicroelectronics
Description: MOSFET P-CH 100V 10A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V, Power Dissipation (Max): 40W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DPAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 80 V.
Інші пропозиції STD10P10F6 за ціною від 25.00 грн до 94.09 грн
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STD10P10F6 | Виробник : STMicroelectronics |
Description: MOSFET P-CH 100V 10A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 80 V |
на замовлення 2188 шт: термін постачання 21-31 дні (днів) |
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STD10P10F6 | Виробник : STMicroelectronics |
Description: MOSFET P-CH 100V 10A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 80 V |
товару немає в наявності |
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| STD10P10F6 | Виробник : STMicroelectronics |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -10A; 40W; DPAK,TO252 Case: DPAK; TO252 Mounting: SMD Polarisation: unipolar Drain current: -10A Drain-source voltage: -100V Gate charge: 16.5nC On-state resistance: 0.18Ω Power dissipation: 40W Kind of channel: enhancement Type of transistor: P-MOSFET |
товару немає в наявності |