| Кількість | Ціна |
|---|---|
| 6+ | 63.67 грн |
| 10+ | 62.28 грн |
| 2500+ | 54.09 грн |
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Технічний опис STD11NM50N STMicroelectronics
Description: MOSFET N-CH 500V 8.5A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 547 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 70W (Tc), Rds On (Max) @ Id, Vgs: 470mOhm @ 4.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції STD11NM50N
| Фото | Назва | Виробник | Інформація |
Доступність |
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STD11NM50N | Виробник : STMicroelectronics |
 Description: MOSFET N-CH 500V 8.5A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) Rds On (Max) @ Id, Vgs: 470mOhm @ 4.5A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 547 pF @ 50 V |
товару немає в наявності |
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STD11NM50N | Виробник : STMicroelectronics |
Description: MOSFET N-CH 500V 8.5A DPAK Input Capacitance (Ciss) (Max) @ Vds: 547 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 470mOhm @ 4.5A, 10V Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |