STD11NM60ND STMicroelectronics
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
| Кількість | Ціна |
|---|---|
| 1+ | 313.64 грн |
| 10+ | 199.79 грн |
| 100+ | 141.81 грн |
| 500+ | 109.83 грн |
| 1000+ | 102.37 грн |
Відгуки про товар
Написати відгук
Технічний опис STD11NM60ND STMicroelectronics
Description: MOSFET N-CH 600V 10A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 90W (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції STD11NM60ND
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
|
STD11NM60ND | Виробник : STMicroelectronics |
Description: MOSFET N-CH 600V 10A DPAK Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
|
 |
STD11NM60ND | Виробник : STMicroelectronics |
MOSFETs N-channel 600V, 10A FDMesh II |
товару немає в наявності |