STD11NM65N STMicroelectronics
Виробник: STMicroelectronics
Description: MOSFET N CH 650V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 455mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V
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Технічний опис STD11NM65N STMicroelectronics
Description: MOSFET N CH 650V 11A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 455mOhm @ 5.5A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V.
Інші пропозиції STD11NM65N за ціною від 105.11 грн до 217.75 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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STD11NM65N | STMicroelectronics |
STD11NM65N STMicroelectronics Transistors MOSFETs N-CH 650V 11A 3-Pin(2+Tab) DPAK T/R - Arrow.com |
на замовлення 840 шт: термін постачання 21-31 дні (днів) |
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STD11NM65N | STMicroelectronics |
STD11NM65N STMicroelectronics Transistors MOSFETs N-CH 650V 11A 3-Pin(2+Tab) DPAK T/R - Arrow.com |
на замовлення 840 шт: термін постачання 21-31 дні (днів) |
|
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STD11NM65N | STMicroelectronics |
Description: MOSFET N CH 650V 11A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 455mOhm @ 5.5A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V |
на замовлення 4162 шт: термін постачання 21-31 дні (днів) |
|
| STD11NM65N |
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Виробник: STMicroelectronics
STD11NM65N STMicroelectronics Transistors MOSFETs N-CH 650V 11A 3-Pin(2+Tab) DPAK T/R - Arrow.com
STD11NM65N STMicroelectronics Transistors MOSFETs N-CH 650V 11A 3-Pin(2+Tab) DPAK T/R - Arrow.com
на замовлення 840 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 161.90 грн |
| 10+ | 159.35 грн |
| 25+ | 156.80 грн |
| 100+ | 148.84 грн |
| 250+ | 135.54 грн |
| 500+ | 127.94 грн |
| STD11NM65N |
|
Виробник: STMicroelectronics
STD11NM65N STMicroelectronics Transistors MOSFETs N-CH 650V 11A 3-Pin(2+Tab) DPAK T/R - Arrow.com
STD11NM65N STMicroelectronics Transistors MOSFETs N-CH 650V 11A 3-Pin(2+Tab) DPAK T/R - Arrow.com
на замовлення 840 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 88+ | 161.90 грн |
| 89+ | 159.35 грн |
| 91+ | 156.80 грн |
| 100+ | 148.84 грн |
| 250+ | 135.54 грн |
| 500+ | 127.94 грн |
| STD11NM65N |
|
Виробник: STMicroelectronics
Description: MOSFET N CH 650V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 455mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V
Description: MOSFET N CH 650V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 455mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V
на замовлення 4162 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 217.75 грн |
| 10+ | 160.36 грн |
| 100+ | 116.10 грн |
| 500+ | 108.68 грн |
| 1000+ | 105.11 грн |