STD170N4F7AG STMicroelectronics
Виробник: STMicroelectronics
MOSFETs Automotive-grade N-channel 40 V, 2.2 mOhm typ 80 A STripFET F7 Power MOSFET
| Кількість | Ціна |
|---|---|
| 2+ | 199.96 грн |
| 10+ | 151.43 грн |
| 100+ | 104.51 грн |
| 500+ | 87.79 грн |
| 2500+ | 68.84 грн |
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Технічний опис STD170N4F7AG STMicroelectronics
Description: MOSFET N-CHANNEL 40V 80A DPAK, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 172W (Tc), Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції STD170N4F7AG
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STD170N4F7AG | Виробник : STMicroelectronics |
Description: MOSFET N-CHANNEL 40V 80A DPAK Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 172W (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
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