STD25N10F7 STMicroelectronics
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 25A DPAK
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 50 V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Технічний опис STD25N10F7 STMicroelectronics
Description: MOSFET N-CH 100V 25A DPAK, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 40W (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 12.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 50 V, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції STD25N10F7 за ціною від 31.77 грн до 115.22 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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STD25N10F7 | STMicroelectronics |
Description: MOSFET N-CH 100V 25A DPAK Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 12.5A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 4312 шт: термін постачання 21-31 дні (днів) |
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STD25N10F7 | STMicroelectronics |
MOSFETs Nchanl 100V 0027 Ohm typ 25 A Pwr MOSFET |
на замовлення 1642 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| STD25N10F7 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 25A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 25A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 4312 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 115.22 грн |
| 10+ | 70.19 грн |
| 100+ | 47.00 грн |
| 500+ | 34.78 грн |
| 1000+ | 31.77 грн |
| STD25N10F7 |
|
Виробник: STMicroelectronics
MOSFETs Nchanl 100V 0027 Ohm typ 25 A Pwr MOSFET
MOSFETs Nchanl 100V 0027 Ohm typ 25 A Pwr MOSFET
на замовлення 1642 шт:
термін постачання 21-30 дні (днів)