STD28P3LLH6AG STMicroelectronics
Виробник: STMicroelectronicsMOSFET Automotive-grade P-channel -30 V, 0.027 Ohm typ -12 A, STripFET H6 Power MOSFET
на замовлення 1397 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 100.18 грн |
| 10+ | 88.62 грн |
| 100+ | 60.11 грн |
| 500+ | 49.61 грн |
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Технічний опис STD28P3LLH6AG STMicroelectronics
Description: MOSFET P-CH 30V 12A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V, Power Dissipation (Max): 33W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DPAK, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±18V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції STD28P3LLH6AG
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STD28P3LLH6AG | Виробник : STMicroelectronics |
Description: MOSFET P-CH 30V 12A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±18V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
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STD28P3LLH6AG | Виробник : STMicroelectronics |
Description: MOSFET P-CH 30V 12A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±18V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |