STD2N105K5 STMicroelectronics
Виробник: STMicroelectronics
Description: MOSFET N-CH 1050V 1.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 750mA, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1050 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 100 V
| Кількість | Ціна |
|---|---|
| 2500+ | 51.45 грн |
| 5000+ | 46.39 грн |
| 7500+ | 44.78 грн |
| 12500+ | 41.96 грн |
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Технічний опис STD2N105K5 STMicroelectronics
Description: MOSFET N-CH 1050V 1.5A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc), Rds On (Max) @ Id, Vgs: 8Ohm @ 750mA, 10V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1050 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 100 V.
Інші пропозиції STD2N105K5 за ціною від 51.35 грн до 175.24 грн
| Фото | Назва | Виробник | Інформація |
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STD2N105K5 | Виробник : STMicroelectronics |
MOSFETs N-channel 1050 V, 6 Ohm typ 1.5 A MDmesh K5 Power MOSFET in DPAK package |
на замовлення 7392 шт: термін постачання 21-30 дні (днів) |
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STD2N105K5 | Виробник : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1050V; 0.95A; 60W; DPAK; ESD Case: DPAK Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar On-state resistance: 8Ω Drain current: 0.95A Power dissipation: 60W Gate-source voltage: ±30V Drain-source voltage: 1.05kV Kind of channel: enhancement Version: ESD |
на замовлення 2242 шт: термін постачання 14-30 дні (днів) |
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STD2N105K5 | Виробник : STMicroelectronics |
Description: MOSFET N-CH 1050V 1.5A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) Rds On (Max) @ Id, Vgs: 8Ohm @ 750mA, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1050 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 100 V |
на замовлення 14568 шт: термін постачання 21-31 дні (днів) |
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