Технічний опис STD30PF03L-1 ST
Description: MOSFET P-CH 30V 24A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 12A, 10V, Power Dissipation (Max): 70W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: I-PAK, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 25 V.
Інші пропозиції STD30PF03L-1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| STD30PF03L-1 | Виробник : STM |
 SOT-252 |
на замовлення 30000 шт: термін постачання 14-28 дні (днів) |
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STD30PF03L-1 | Виробник : STMicroelectronics |
Description: MOSFET P-CH 30V 24A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 12A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: I-PAK Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 25 V |
товар відсутній |
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STD30PF03L-1 | Виробник : STMicroelectronics |
MOSFET P-Ch 30 Volt 24 Amp |
товар відсутній |