STD35NF06T4 STMicroelectronics
Виробник: STMicroelectronics
Description: MOSFET N-CH 60V 35A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 17.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
| Кількість | Ціна |
|---|---|
| 2500+ | 39.42 грн |
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Технічний опис STD35NF06T4 STMicroelectronics
Description: MOSFET N-CH 60V 35A DPAK, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 80W (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 17.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount.
Інші пропозиції STD35NF06T4 за ціною від 30.45 грн до 138.74 грн
| Фото | Назва | Виробник | Інформація |
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STD35NF06T4 | Виробник : STMicroelectronics |
MOSFETs N-Ch 60 Volt 35 Amp |
на замовлення 5545 шт: термін постачання 21-30 дні (днів) |
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STD35NF06T4 | Виробник : STMicroelectronics |
Description: MOSFET N-CH 60V 35A DPAK Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 17.5A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 4211 шт: термін постачання 21-31 дні (днів) |
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STD35NF06T4 | Виробник : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 24.5A; 80W; DPAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 24.5A Power dissipation: 80W Case: DPAK Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |