STD37P3H6AG STMicroelectronics
Виробник: STMicroelectronics
MOSFET Automotive-grade P-channel -30 V, 11 mOhm typ., -49 A STripFET H6 Power MOSFET in a DPAK package
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Технічний опис STD37P3H6AG STMicroelectronics
Description: MOSFET P-CH 30V 49A DPAK, Power Dissipation (Max): 60W (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 49A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 30.6 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 4V @ 250µA.
Інші пропозиції STD37P3H6AG
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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STD37P3H6AG | STMicroelectronics |
Description: MOSFET P-CH 30V 49A DPAK Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 49A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 30.6 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 4V @ 250µA |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
| STD37P3H6AG |
|
Виробник: STMicroelectronics
Description: MOSFET P-CH 30V 49A DPAK
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Description: MOSFET P-CH 30V 49A DPAK
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.